Abstract
High-purity two-dimensional hole systems of dilute charge concentrations are realized in GaAs field-effect transistors. For fixed charge densities below $4\ifmmode\times\else\texttimes\fi{}{10}^{9}$ cm${}^{\ensuremath{-}2}$, transport measurement reveals a conductivity ($\ensuremath{\sigma}$) kink while sweeping temperature across some characteristic value ${T}_{c}$, where the derivative $d\ensuremath{\sigma}/\mathit{dT}$ exhibits a discontinuous step. Moreover, ${T}_{c}$ has a piecewise density dependence separated approximately by the critical density of the apparent metal-to-insulator transition.
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