Abstract
The effect of electron irradiation on n-4H-SiC is studied by the methods of capacitance-voltage characteristics and photoluminescence. The carrier-removal rate is found to be Vd ≈ 0.25 cm−1. Total conductivity compensation in samples with an initial carrier concentration of (1–2) × 1015 cm−2 is observed at irradiation doses of ∼5 × 1015 cm−2. Simultaneously with an increase in the compensation, a rise in the intensity of defect-related luminescence characteristic of 4H-SiC is observed. The sample parameters before irradiation and after irradiation and annealing are compared. The physical mechanisms of compensation in the samples under study are analyzed.
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