Conductivity Compensation in CVD-Grown n-4H-SiC under Irradiation with 0.9 MeV Electrons

Abstract

Effects of electron irradiation in n-4H-SiC have been studied by the methods of the capacitance--voltage characteristics and photoluminescence. It was found that the carrier removal rate (Vd) reached a value of ~0, 25 cm- 1. Full compensation of samples with an initial concentration of 1.2 1015 cm -3 was observed at doses of about 5 1015 cm -2. Simultaneously with the increase in the degree of compensation, the intensity of the “defect luminescence”, typical of 4H SiC, became higher. The physical compensation mechanisms were analyzed for the samples under study.