Abstract
The effect of cadmium vapor pressure during postgrowth annealing on the compensation of conductivity has been studied in semi-insulating Cd1−x Zn x Te:Cl crystals with variable zinc content (x = 0.005, 0.01, and 0.05), which are used in nuclear radiation detectors. At a small zinc content (x = 0.005 and 0.01), the main role in the in Cd1−x Zn x Te:Cl crystals is played by the cadmium point defects. In crystals with a higher zinc content (x = 0.05), the compensation of charged defects is incompletely controlled by changing the cadmium vapor pressure, which is evidence of a significant influence of the zinc point defects.
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