Abstract
A study has been made of electrophysical properties and deep traps in epitaxial n-GaAs grown by the chloride method and irradiated by electrons in the temperature range (20–500)°C. It is shown that the “natural” conductivity of GaAs is attained at irradiation temperatures of 20°C due to the introduction of E traps, and for 300°C≤Tirr≤500°C of high-temperature P traps, presumably defect clusters.
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