Abstract

Applying a recently developed helium ion microscope, we demonstrated direct nano-patterning and Anderson localization of single-layer graphene (SLG) on SiO2/Si substrates. In this study, we clarified the spatial-resolution-limitation factor of direct nano-patterning of SLG. Analysis of scanning capacitance microscopy measurements reveals that the conductivity of helium ion (H+)-irradiated SLG nanostructures depends on their geometrical size, i.e., the smaller the H+-irradiated SLG region, the higher its conductivity becomes. This finding can be explained by the hopping carrier transport across strongly localized states of defective SLG.

Highlights

  • Due to its superior, often surprising electrical and mechanical properties, graphene has currently attracted much interest in basic physics as well as applied device physics.[1,2,3] Graphene-based devices are commonly fabricated using electron-beam (EB) lithography with subsequent plasma etching.[4,5,6] EB lithography requires photoresist processing, which contaminates the graphene surface and degrades its transport properties

  • We investigated the impact of accelerated helium ion (He+)-beam irradiation of graphene using the recently developed Orion Plus helium ion microscope (HIM) and demonstrated direct nanoscale patterning of graphene.[7]

  • Current flowing between probe tip of Conductive AFM (C-AFM) and graphene surface induce anodic oxidation

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Summary

Introduction

Often surprising electrical and mechanical properties, graphene has currently attracted much interest in basic physics as well as applied device physics.[1,2,3] Graphene-based devices are commonly fabricated using electron-beam (EB) lithography with subsequent plasma etching.[4,5,6] EB lithography requires photoresist processing, which contaminates the graphene surface and degrades its transport properties. Conductivity change of defective graphene by helium ion beams

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