Abstract
Conductivity-enhancement effect induced by electron spin resonance was investigated in amorphous Si 1- x Au x films prepared by electron-beam evaporation. Conductivity, conventional ESR and conductivity-change at ESR were measured from 77 K to 300 K for various Au concentrations. The ESR signal was detected in Au concentration region of \(x \lesssim 10\)%. The linewidth of ESR showed temperature variation and the spin density was reduced by doping of Au atoms. The conductivity-increase was detected at Au concentrations of \(x \lesssim 1.4\)% and showed characteristic variations with temperature and Au concentration. These results are discussed in terms of variable-range hopping conduction.
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