Abstract
Highly sensitive to methane semiconductor sensors were obtained with the use of nanosized tin dioxide synthesized via sol-gel method. Sensitization of the sensors was achieved by introduction of Pt additives into semiconductor gas sensitive materials. Experimental data of dependences of conductivities of the created sensors on methane concentrations were used for approximation by a mathematical model of the sensor conductivity and response formation. The model is based on features of a methane oxidation reaction on the surface of the gas sensitive material and allows to connect conductivity of the sensor with surface processes occurred on its gas sensitive layer.
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