Abstract
Highly sensitive to methane semiconductor sensors were obtained with the use of nanosized tin dioxide synthesized via sol-gel method. Sensitization of the sensors was achieved by introduction of Pt additives into semiconductor gas sensitive materials. Experimental data of dependences of conductivities of the created sensors on methane concentrations were used for approximation by a mathematical model of the sensor conductivity and response formation. The model is based on features of a methane oxidation reaction on the surface of the gas sensitive material and allows to connect conductivity of the sensor with surface processes occurred on its gas sensitive layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
