Conductively Cooled 637-nm InGaP Broad-Area Lasers and Laser Bars With Conversion Efficiencies Up to 37% and a Small Vertical Far Field of 30$^{\circ}$

Abstract

Highly efficient operation of 637-nm broad-area (BA) laser diodes and laser bars with a small vertical far field of 30deg (full-width at half-maximum) is reported. The laser structure consists of an InGaP quantum well embedded in AlGaInP waveguide layers and n-AlInP and p-AlGaAs cladding layers. Single BA emitters with a stripe width of 30 mum emitted a maximum continuous-wave (CW) power of 540 mW at 15degC. Six-millimeter-wide laser bars with 12 30- mum-wide emitters (filling factor of 6%) reached CW power levels of 5.4 W at 15degC. The maximum conversion efficiency of single lasers and laser bars at 15deg C was 37% and 31%, respectively.