Abstract
We have investigated the optical and electrical properties of (InGa)2O3:Eu films. We have demonstrated the obtained (InGa)2O3:Eu films have conductive transparent properties, and they can be used as a host for rare earth Eu. The (InGa)2O3:Eu films are of a (111) oriented cubic structure, as revealed by both x-ray diffraction and Raman spectroscopy measurements. The (InGa)2O3:Eu films show high transmittance of over 70% in the visible wavelength range and low resistivity ranging from 2.8 × 10−3 Ω cm to 2.1 × 10−2 Ω cm, depending on the Ga content. The intensity of main Eu3+ emission peaks upon excitation at 488 nm at room temperature increased with an increase in the Ga content. The enlarged bandgap as well as the decreased local symmetry of the cubic structure should be responsible for the enhanced Eu3+ emission. The results suggested that (InGa)2O3:Eu films can be very good candidates for light-emitting devices that can be driven electrically.
Highlights
Rare earth (RE) doped semiconductors are promising materials for integrated optoelectronic applications and compact color displays due to their narrow emission line from the intra-4f shell transitions in RE ions.[1,2,3,4] With these materials, it is possible to develop light-emitting devices driven electrically
We find that strong rare earth emission can be generated from the resulting (InGa)2O3:Eu films at room temperature using 488 nm excitation, while conductive transparent properties are retained
All Ga incorporated (InGa)2O3:Eu films showed strong Eu emissions at room temperature, which have not been detected from their counterpart, In2O3:Eu films
Summary
Rare earth (RE) doped semiconductors are promising materials for integrated optoelectronic applications and compact color displays due to their narrow emission line from the intra-4f shell transitions in RE ions.[1,2,3,4] With these materials, it is possible to develop light-emitting devices driven electrically. Indium oxide (In2O3) is a semiconductor with a wide bandgap (Eg = 3.6 eV). It is highly transparent in the visible range and possesses high free carrier mobility.[6]. It finds applications in diverse fields such as electrooptic modulators,[7] electrochromic mirrors,[8] solar cells,[9] flat panel displays,[10] gas sensor devices,[11] and thin film transistors.[12]. In2O3 as a luminescent host for RE doping has been reported.[14]. Xiao et al reported that Eu ion doped In2O3 nanophosphors are highly useful in fabrication of electroluminescence devices and luminescent nanobiolabels.[13]. Dutta et al observed luminescence in Eu doped In2O3 nanoparticles.[16]
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