Abstract

Boron-doped diamond hollow fiber membrane (BDD–HFM) was fabricated as a novel type of porous conductive diamond. BDD–HFM was obtained by deposition of BDD polycrystalline film onto a quartz filter substrate consisting of quartz fibers, followed by etching of the substrate in HF/HNO 3 aqueous solution. Cross-sectional scanning electron microscope (SEM) observation showed the inner diameter and wall thickness of the BDD hollow fibers were in the range of 0.4–2 and 0.2–2 μm, respectively. The BDD–HFM electrode exhibited a relatively large double-layer capacitance (ca. 13 F g −1) in 0.1 M H 2SO 4. Electrochemical AC impedance properties were simulated using an equivalent circuit model containing a transmission line model, which indicated characteristics of a porous electrode material.

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