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Abstract
The effect of S content on the electrical property of the sol–gel SnSx films was examined. The observed conduction-type changes are related to the different ratios between the concentrations of Sn4+ and Sn2+. The experimental identification confirms that n-type conversion is due to an increase in the atomic concentration ratio of Sn4+/(Sn4++Sn2+) in the S-rich film. The probability of having formed Sn vacancies (VSn) should be high under S-rich growth conditions. Transformation from VSn to VSn2- is accompanied by lattice relaxation. Therefore, transformation from Sn2+ to Sn4+ is an offset to lattice relaxation under S-rich growth conditions, increasing the electron density and producing n-type conversion. A suitable sulfur concentration is an important issue for tuning conduction type of SnSx.
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