Abstract
In the work, the resistivity of the SiN film was discussed, the resistivity of the SiN film was influenced by the deposition parameters, such as the sputtering power, deposition temperature, N2 pressure and ratio of N2/(N2+Ar). Only considering the resistivity of the SiN film, the optimal parameters of the film were as below, the sputtering power was 50W, the substrate temperature was 400°C, N2 pressure was 1Pa, and the ratio of N2/(N2+Ar) was 2.5%.
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