Abstract
Conduction mechanisms of ferroelectric tunnel junction (FTJ) using metal-ferroelectric-insulator- semiconductor (MFIS) on n- and p-type semiconductor is clarified by a new developed model, which is verified by the experimental results. In the model, electron tunneling from conduction band and valence band, and hole tunneling from valence band are included to calculate the read current in ON/OFF-state of MFIS-FTJ. The model explains the unexpected polarization polarity of ON/OFF-state in p-type and the difference of tunneling electroresistance (TER) ratio between n- and p-type MFIS-FTJ, which cannot be understood just by the depletion/accumulation for majority carriers in semiconductor.
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