Abstract
The steady‐state d‒c conduction properties of silicon nitride films in the range of 50–100Aå are reported. The nitride films were formed by vapor deposition on degenerate silicon substrates using the silane‐ammonia reaction. The temperature, thickness, and field dependence of current indicates that a transition in current mechanisms occurs at a film thickness of approximately 80Aå. Below this film thickness, the current is characterized by low temperature dependence and large thickness dependence. At film thickness above this value, the current is proportional to exp.
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