Abstract
The electron transport in a polycrystalline, composite mixture of InSeIn6Se7 has been studied as a function of temperature down to 77 K. It is found that the composite mixture exhibits a ‘Fermi glass’ type conduction behavior which is normally observed only in highly disordered semiconductors. For temperatures above 190 K, the resistivity varies inversely with temperature and the maximum conductivity corresponding to 1/T=0 is 2.24 Ω −1 cm −1. In the temperature range 77 K to 190 K the conduction mechanism changed from thermal excitation to ‘variable range hopping or phonon assisted tunnelling’. The resistivity varies as T − 1 4 and the density of states at the Fermi level is found to be ∼ 2.0x10 19 cm −3eV −1. The presence of a finnite density of localized states at the Fermi level is attributed to defects such as polytypic impurities, variations in local coordination number and vacancies.
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