Conduction mechanism in a novel oxadiazole derivative: effects of temperature and hydrostatic pressure

Abstract

The quasi-four-probe resistivity measurement on the microcrystal of 1,4-bis[(4-heptyloxyphenyl)-1,3,4-oxadiazolyl]phenylene (OXD-3) is carried out under variable pressure and temperature conditions using a diamond anvil cell (DAC). Sample resistivity is calculated with a finite element analysis method. The temperature and pressure dependences of the resistivity of OXD-3 microcrystal are measured up to 150°C and 15 GPa, and the resistivity of OXD-3 decreases with increasing temperature, indicating that OXD-3 exhibits organic semiconductor transport property in the region of experimental pressure. With an increase of pressure, the resistivity of OXD-3 first increases and reaches a maximum at about 8 GPa, and then begins to decrease at high pressures. From the x-ray diffraction data in DAC under pressure, we can conclude that the anomaly of resistivity variation at 8 GPa results from the pressure-induced amorphism of OXD-3.