Abstract
The low-frequency noise (LFN) Characteristics of bipolar switching devices consisting of Pt (top)/Al/Pr0.7Ca0.3MnO3 (PCMO)/Pt (bottom) were investigated. The noise spectral density in a low frequency range showed a classical 1/f dependence in both high-resistance state (HRS) and low-resistance state (LRS). The random telegraph noise (RTN) were observed in both HRS and LRS which is due to the AlOx layer acting as traps at the interface between Al and PCMO or traps in PCMO bulk layer. The voltage dependence of the normalized low-frequency spectral density of current fluctuations (Si/I2) presents that the noise properties can be useful indicators to explain the switching mechanism of Al/PCMO device but new noise models should be suggested for the clear approach to analysis of the conduction characteristics in the devices.
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