Abstract
A heavy phosphorus doped hydrogenated nanocrystalline silicon((n+)nc-Si:H) film was deposited by plasma enhanced chemical vapour deposition techniqueon a heavy doped p-type crystal silicon substrate to form a heterojunction of(n+)nc-Si:H/(p+)c-Si. Fromelectrical measurements of this prepared structure, both negative resistance in forward current–voltage(I–V) measured plots and large reverse current in reverseI–V experimental curves were observed, which reveal the structure as a semiconductorbackward diode. The forward current can be assigned to interband tunnel,excess, hump and thermionic emission component, while the reverse currentwhich shows exponential dependence on applied voltage can be ascribed toan internal field emission (Zener mechanism) term. Also, the crucial role of(n+)nc-Si:Hin I–V characteristics was analyzed.
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