Abstract
Abstract The effect of nitrogen on the conduction-band tail width ΔE has been investigated for a-Si: H films produced by d.c. sputtering. Measurements of steady-state photoconductivity versus temperature show that AE increases continuously from 0·14 to 0·3 eV when the nitrogen concentration increases from N/Si = 0 to 0·7. The evolution of ΔE is consistent with a constant value of about 600 Ω−1 cm−1 for the minimum metallic conductivity. A brief discussion shows that the increase of ΔE is due to an increase of vertical or lateral disorder which prevails over an expected decrease of disorder due to the introduction of threefold-coordinated nitrogen atoms.
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