Abstract
Energy eigenvalues, binding energy and diamagnetic susceptibility of an on-center hydrogenic impurity confined in typical GaAs/Al x Ga 1− x As spherical quantum dots are theoretically investigated, using the matrix diagonalization method. In this regard, the effect of band non-parabolicity has been performed, by means of the Luttinger–Kohn effective mass equation. The lower-lying states, the binding energy and the diamagnetic susceptibility of the hydrogenic impurity are computed as a function of the dot size, with and without conduction band non-parabolicity effect. Results show that the band edge non-parabolicity considerably changes the electronic structure, the binding energy and the diamagnetic susceptibility, especially at small radii.
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