Abstract
The influence of the design parameters on the conduction band profile and optoelectronic properties of [111]-oriented InGaAs/GaAs P-I(MQW)-N diodes is presented. An analytical expression for the average electric field in the PIN active region (MQW's within the intrinsic region) is obtained. The existence of two different potential envelopes, corresponding to a positive or to a negative sign of the average electric field, and giving rise to clearly different optical and electronic properties, is demonstrated. In samples with negative average electric field, as compared to structures with positive average electric field, larger reverse voltages are needed to quench the photoluminescence end to enhance the PIN photocurrent. An analysis of both transition energies and intensities, versus bias, clearly indicates that in samples with a negative average electric field carriers accumulate at the extremes of the active region, giving rise to a long range screening effect of the field in the wells.
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