Abstract
Ballistic electron emission microscopy (BEEM) and internal photoemission measurements on a 20-nm-thick epitaxial Sc2O3 film on Si (111) show the existence of a lower “tail state” conduction band (CB) extending ∼0.9eV below the upper CB (similar to that reported for amorphous Sc2O3 films), indicating that these states are not simply due to disorder in amorphous films. This lower CB is also found to support elastic hot-electron transport even against an applied electric field, indicating transport via extended rather than localized states.
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