Abstract

We measured and analyzed the Hall offset voltages in InGaZnO thin-film transistors. The Hall offset voltages were found to decrease monotonously as the electron densities increased. We attributed the magnitude of the offset voltage to the misalignment in the longitudinal distance between the probing points and the electron density to Fermi energy of the two-dimensional electron system, which was verified by the coincidence of the Hall voltage with the perpendicular magnetic field in the tilted magnetic field. From these results, we deduced the combined conduction band edge energy profiles from the Hall offset voltages with the electron density variations for three samples with different threshold voltages. The extracted combined conduction band edge varied by a few tens of meV over a longitudinal distance of a few tenths of µm. This result is in good agreement with the value obtained from the analysis of percolation conduction.

Highlights

  • Oxide semiconductors are used in various applications, including flat-panel displays [1,2], optical sensors [3,4], and solar cells [5,6], owing to their excellent electrical and optical properties

  • The current conduction mechanisms in a-IGZO thin-film transistors (TFTs) have to be understood in depth to further improve their electrical characteristics for future applications in faster and larger displays

  • The fundamental carrier-transport properties of a-IGZO thin films were extensively studied by Hall measurement [16] and electrical transport measurements [17,18], which were interpreted as trap-limited conduction in low-gate voltage operations and percolation conduction at high-gate voltages

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Summary

Introduction

Oxide semiconductors are used in various applications, including flat-panel displays [1,2], optical sensors [3,4], and solar cells [5,6], owing to their excellent electrical and optical properties. 3. ResTuFlTitgswuarintehd2tDhsehisotocwpusspstaihsosenivdartaioinn clauyrerre.nt IDS as a function of the gate-source voltage VGS, i.e., the transfer curve, measured in our device.

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