Abstract
The conduction band discontinuity between n-type Si substrates and anatase TiO2 films has been investigated. n-type Si substrates with three different dopant concentrations were used as a substrate for TiO2 thin-films: ND = 1015–16 cm−3 (as n-Si); ND = 1017–18 cm−3 (as n+-Si); ND = 1020–21 cm−3 (as n++-Si). The translation of X-ray photoelectron spectroscopy (XPS) results to an energy band diagram through the valence band offset (VBO) enables us to evaluate the conduction band discontinuities accurately: n-Si/TiO2—−0.22 eV, n+-Si/TiO2—−0.06 eV, and n++-Si/TiO2—+0.07 eV. Temperature–dependent current–voltage (I–V) characteristics were measured to evaluate the Fermi energy level (EF) of the TiO2 thin-films. Light transmittance was measured to evaluate the energy bandgap of the TiO2 thin-films. The band diagram of the n-type Si/TiO2 heterojunction was proposed. Deep-insight analysis of n-type Si/TiO2 was carried out on the basis of measured I–V characteristics.
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