Abstract
The fluorescence of GaAs under conditions of electron beam bombardment has been studied for a number of specimens at 300 and 77°K. A careful examination of the spectral line shapes suggests that in both p-and n-type doped material the conduction band density of states function trails exponentially into the ‘forbidden’ gap. The suggestion is made that in p-type material the disturbance of the conduction band is due directly to the presence of ionised acceptors. The theory of Halperin and Lax is used to predict the form of a conduction band density of states tail in the presence of acceptors, and reasonable agreement with experiment is found.
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