Abstract
AbstractIn this paper the author analyze the conduction (valence) band position versus the Fermi‐level stabilization energy (EFS) for quaternary dilute nitrides such as GaInNP, GaInNAs, GaInNSb, GaNPAs, GaNPSb, GaNAsSb, InNPAs, InNPSb and InNAsSb in the whole range of N‐free host content within the method proposed in J. Appl. Phys. 101, 023522 (2007). Since it was found that the Fermi level tends to be pinned close to the EFS in as‐grown dilute nitrides, the information about the conduction band position versus the EFS is important from the viewpoint of native defect formation in III‐V‐N alloys as well as the Schottky contact formation. In this paper III‐V‐N alloys for which the EFS is located into the conduction band are recognized. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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