Abstract
A reversible memory behavior in TeO2–ZnO thin films containing Au nanoparticles prepared using the sputtering technique has been observed. The current–voltage characteristics of the films, having Al and Si as electrodes, showed a switching behavior starting from an initial state of low conductivity to a high conductivity one. As a result, an abrupt increase of current (10−7 to 10−3A) was observed for 6.5V (100nm thickness). Au nanoparticles provide a larger electron storage capability, and do not favor the transport through the insulator; they present a higher trapped charge concentration, which reduces the leakage current to lower levels. The influence of the Au nanoparticle diameter and volumetric concentration to reach the abrupt current transition and the value of the transition voltage was studied. These parameters were found to play an important role on reversible memory phenomena as they determine the facility/difficulty to fill and saturate the traps (Au nanoparticles) with electrons.
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