Abstract
Electronic conduction in anodic oxide films of all thicknesses on all metals studied (Ta, Nb, W, Zr, Al) can occur at certain flaws in the films. Flaw conduction usually dominates the behavior of thick films; it is characterized by marked hysteresis and unusual memory and temperature effects. Flaw conduction is shown to occur by at least two mechanisms: one the opening of physical holes and the other involving some kind of electronic junction. Conduction in the bulk of the film dominates on thin films of Ta2O5, Nb2O5, and WO3. Such conduction is not entirely uniform, and depends strongly on formation conditions, film thickness, temperature, and film history. The mechanism of this bulk conduction appears to involve primarily electron injection into an insulator containing traps; rectification occurs when the contacts produce an asymmetric barrier.
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