Abstract
The a.c. polarization of anodic Al2O3 films was studied in the thickness range 30–1500 A and the frequency range 300 Hz to 15 kHz. The interfacial polarization mechanism involving distinct regions separated by flaws and/or voids in the bulk was thought to become dominant with decreasing thickness because of an increasing concentration of defects. The d.c. conductivity at the room temperature was also studied in the same thickness range. The observed linear log JversusE12 characteristics for several thicknesses showed that d.c. conduction in these films obeys the Poole-Frenkel law over a certain range of applied electric fields. Anomalies observed in the electric field and the thickness dependences of the d.c. conductivity are considered to arise from the thickness dependence of the defect concentration. It was concluded that the same mechanism of carrier motion might be dominant in both a.c. polarization and d.c. conduction.
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