Abstract
Abstract Suitability of oxide electronic conductors [e.g. ruthenium oxide (RuOx) and indium-tin-oxide (ITO)] as contact metallization for ferroelectric films (e.g. PbZrxTi1−xO3) was investigated using techniques such as Rutherford backscattering spectrometry, x-ray diffraction and electron spectroscopy for chemical analysis. Thin films of RuOx and ITO were deposited on Si substrates by reactive sputtering. Either PbO or PZT (x = 0.53) films were deposited onto the conducting oxides and the specimens were annealed at various temperatures between 400°C and 700°C. Less intermixing was found in Si/RuOx/ PZT films when compared to Si/ITO/PZT under similar processing conditions. The ferroelectric properties of PZT films on RuOx electrodes are compared to those on Pt electrodes. The PZT films show improved fatigue properties on RuOx electrodes.
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