Abstract
High-quality TiN and TiO2 thin films were grown on MgO(100) substrate by plasma-assisted molecule beam epitaxy. X-ray photoelectron spectroscopy and x-ray diffraction studies indicate that the films are single phase. The memory cell composed of Ti/TiO2/TiN/MgO showed a bistable bipolar resistive switching behavior with either electrode grounded. The nature of the bipolar resistive switching phenomenon could derive from the formation and annihilation of filaments induced by oxygen vacancy and oxygen ion migration near/at the bias-applied electrode. In addition, a simple calculation of the filamentary resistivity in model might indicate that different devices made by TiO2 thin films with different phases might share the similar resistive switching mechanism.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
