Conducting filaments and switching phenomena in chalcogenide semiconductors

Abstract

The sizes of the conducting filaments formed after switching operations in chalcogenide semiconductors have been measured as functions of input power in the on-state and specimen thickness using a scanning electron microscope. The experimental results show that the threshold switching involves double injection from both metallic contacts in the sandwich structure, and the combination of the electrothermal and the electronic processes. The conducting filament responsible for the switching consists of two permanent portions, one started from the anode and the other from the cathode, which have undergone a permanent change in material composition and structure after even one switching operation; and one temporary portion between the ends of the two permanent portions, which has not undergone any change in material composition or structure after many switching operations. The size of each portion depends strongly on the current level in the on-state, at which the filament is formed.