Abstract
Topography and tunnelling current mapping of 13, 24 and 53 /spl Aring/ thick SiO/sub 2/ oxides on silicon substrates have been performed by combined AFM (atomic force microscopy) techniques. The topography measurements revealed an increased density of pits on the SiO/sub 2/ surface of the 13 and 24 /spl Aring/ oxide. This gave rise to concerns over technology reliability, and suggested further analysis. Various AFM techniques including Conducting AFM (C-AFM) and Intermittent Contact AFM (IC-AFM) have been used singly and in combination. Commercially available C-AFM tips have been observed to limit the available spatial resolution. Therefore, additional high resolution IC-AFM measurements with sharp silicon probe tips have been made by the incorporation of nanometric orientation marks grown purposely on the surface by anodic oxidation. Good correlation between the topography image of the IC-AFM and the tunneling current mapping of C-AFM in respect to the location of surface features has been observed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
