Conductance transient spectroscopy of metal-semiconductor field effect transistors

Abstract

We have performed conductance deep-level transient spectroscopy experiments on planar gate structure GaAs MESFETs (metal-semiconductor field-effect transistors) using positive and negative filling pulses and, in some cases, under light exposure. We present a simple surface model which accurately describes the main features of the experimental data. We discuss the differences between the predictions of the model and the experimental results.