Abstract
A new effect has been observed at low temperatures when conduction is restricted to two dimensions in an n-type GaAs impurity band. When the carrier concentration is less than 1011 cm-2 the conductance is found to oscillate as a function of carrier concentration. The oscillations can be resolved into simple series with the minima periodic functions of the mean electron separation. Suppression of the main series and enhancement of a subsidiary series is achieved by increasing the electric field responsible for transport; this results in differential negative resistance at certain carrier concentrations. The effect may possibly arise from an ordering of the electrons by Coulomb repulsion, although it is difficult to envisage how this can happen in a random array of donors and there is at present no model to explain the effect.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
