Abstract

The conductance of the single-electron transistor is examined in the strong tunneling regime, where the tunneling conductance of the junctions may exceed the conductance quantum. Electron tunneling is treated nonperturbatively by means of a path integral formulation and the conductance is obtained from the Kubo formula. Higher-order perturbative results for weak tunneling and analytical results for strong tunneling based on the semiclassical approximation are bridged by quantum Monte Carlo simulations. The findings are compared with recent experimental results.

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