Abstract
This work describes a conductance modeling of aluminum oxide (Al2O3) gates prepared by oxidation of aluminum thin films in nitric acid at room temperature followed by annealing at 650oC. The electrical characterization was performed by measurements of Current-Voltage (I-V) and Capacitance X Voltage (C-V) characteristics. The Al2O3 films with equivalent thicknesses (EOT) ranging from 2.3 to 4.3nm presented different mechanisms of leakage through the aluminum oxide gates. Also, it was shown that Al2O3 thin films annealed in ultrapure Argon presented better electrical characteristics (leakage current ≈ 11.5 mA/cm2).
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