Conductance in nanometer scale poly-Si wire gate MOS field effect transistors

Abstract

Nanometer scale poly-Si wire gate MOS field effect transistors were fabricated by using electron beam lithography and reactive ion etching techniques. The transport characterization of these devices at 4.2K shows clear quantized step-like conductance. For samples with channel length of 1μm ∼ 2μm, which is longer than the phase-breaking length at 4.2K, quantized conductance steps of the order of (0.1 ∼ 1.0)e 2/h were still observed at zero magnetic field.