Abstract
Measurements of conductance G on short, wide, high-mobility Si-MOSFETs reveal both a two-dimensional metal–insulator transition (MIT) at moderate temperatures (1< T<4 K) and mesoscopic fluctuations of the conductance at low temperatures ( T<1 K). Both were studied as a function of chemical potential (carrier concentration n s) controlled by gate voltage ( V g) and magnetic field B near the MIT. Fourier analysis of the low-temperature fluctuations reveals several fluctuation scales in V g that vary non-monotonically near the MIT. At higher temperatures, G( V g, B) is similar to large FETs and exhibits a MIT. All of the observations support the suggestion that the MIT is driven by Coulomb interactions among the carriers.
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