Conductance Anomalies and Electronic States in Silicon Inversion Layers near Threshold at Low Temperatures

Abstract

The conductivity of n -type inversion layers in silicon MOS field-effect transistors near threshold is studied as a function of electron concentration n s , temperature and magnetic field. In the specimens with a small amount of disorder at the interfaces, the inversion layer conductivity at low concentrations n s <10 11 cm -2 shows a sharp maximum at around 13 K. This anomalous enhancement of inversion layer conductivity is discussed relating to the Wigner crystallization.