Abstract

New implementations within concurrent processing using three-dimensional lattice networks via nano carbon-based field emission controlled-switching is introduced in this article. The introduced nano-based three-dimensional networks utilize recent findings in nano-apex field emission to implement the concurrent functionality of lattice networks. The concurrent implementation of ternary Galois functions using nano threedimensional lattice networks is performed by using carbon field-emission switching devices via nano-apex carbon fibers and nanotubes. The presented work in this part of the article presents important basic background and fundamentals with regards to lattice computing and carbon field-emission that will be utilized within the follow-up works in the second and third parts of the article. The introduced nano-based three-dimensional lattice implementations form new and important directions within three-dimensional design in nanotechnologies that require optimal specifications of high regularity, predictable timing, high testability, fault localization, self-repair, minimum size, and minimum power consumption.

Highlights

  • With future logic realization in technologies that are scaled down rapidly in size, the emphasis will be increasingly focused on the mutually linked issues of regularity, predictable timing, high testability, fast fault localization and self-repair [2], [3], [7], [31].For the current leading technologies with the active-device count reaching the hundreds of millions, and more than 80% of circuit areas are occupied by local and global interconnects, the delay of interconnects is responsible for up to 50% or more of the total delay associated with a circuit [2], [31]

  • The carbon nanotubes (CNTs) technology is one of several cutting-edge emerging technologies within nanotechnology that is showing high efficiency and very wide range of applications in several various fields in science and technology, where recent examples of such applications include TVs based on field-emission of CNTs that consume much less power, thinner and are of much higher resolution, and nanocircuits based on CNTs such as CNT Field Effect Transistors (FETs) that show high potential for consuming less power and to be much faster than the available silicon-based FETs

  • The CNT is made of graphite, where it has been observed that graphite can be formed within nano-scale in three different forms: (1) Carbon nanoball which is a molecule that consists of 60 carbon atoms (C60) that are arranged in the form of a soccer ball, (2) Carbon nanotube (CNT) which is a narrow strip of tiny sheet of graphite that comes mainly in two types of multi-wall CNT (MWCNT) where each CNT contains several hollow cylinders of carbon atoms nested inside each other and single-wall CNT (SWCNT) that is made of just a single layer of carbon atoms, and (3) Carbon nanocoil

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Summary

INTRODUCTION

With future logic realization in technologies that are scaled down rapidly in size, the emphasis will be increasingly focused on the mutually linked issues of regularity, predictable timing, high testability, fast fault localization and self-repair [2], [3], [7], [31]. Electrical implementations of basic logic gates such as the logic inverter using CNTs have been demonstrated [18], engineering CNT circuits using electrical breakdown has been shown [17], the utilization of CNT films for cathodebased implementations has been demonstrated [30], designing CNT multiplexer-based circuits and actuators has been shown [4]-[6], and the potential importance of CNTs for designing electronic circuits and systems has been proposed [16] This first part of the article introduces basic background in concurrent processing using threedimensional lattice networks and basic carbon-based field emission characteristics that will be used in the second and third parts of the article within concurrent processing via field emission-based three-dimensional lattice networks.

TWO-DIMENSIONAL LATTICE NETWORKS
THREE-DIMENSIONAL LATTICE NETWORKS
CARBON NANOTUBES AND NANOTIPS
CARBON NANOTUBES CHARACTERISTICS AND PROPERTIES
CARBON NANOTUBE-BASED MULTIPLEXING DEVICES
F Si back-gate Si back-gate
CARBON NANOTUBES-BASED FIELD EMITTERS
CARBON NANOTIPS-BASED FIELD EMITTERS
Findings
CONCLUSIONS

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