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Abstract
In this paper we present experimental results of investigations of vacancy complexes Vxtrail (“trail defects”), generated by moving dislocations in silicon. For detection of Vxtrail defects we used their reactions with atoms of transition metals. LBIC and DLTS methods were used for investigations of electrically active defects. We show that the probability of generation of Vxtrail defects by a moving dislocation decreases with increasing temperature of plastic deformation with activation energy of about 2.3 eV.
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