Conception, fabrication and characterization of a silicon based MEMS inertial switch with a threshold value of 5 g

Abstract

Most of the MEMS inertial switches developed in recent years are intended for shock and impact sensing with a threshold value above 50 g. In order to follow the requirement of detecting linear acceleration signal at low-g level, a silicon based MEMS inertial switch with a threshold value of 5 g was designed, fabricated and characterized. The switch consisted of a large proof mass, supported by circular spiral springs. An analytical model of the structure stiffness of the proposed switch was derived and verified by finite-element simulation. The structure fabrication was based on a customized double-buried layer silicon-on-insulator wafer and encapsulated by glass wafers. The centrifugal experiment and nanoindentation experiment were performed to measure the threshold value as well as the structure stiffness. The actual threshold values were measured to be 0.1–0.3 g lower than the pre-designed value of 5 g due to the dimension loss during non-contact lithography processing. Concerning the reliability assessment, a series of environmental experiments were conducted and the switches remained operational without excessive errors. However, both the random vibration and the shock tests indicate that the metal particles generated during collision of contact parts might affect the contact reliability and long-time stability. According to the conclusion reached in this report, an attentive study on switch contact behavior should be included in future research.