Abstract
The dependence of Europium (Eu)-related luminescence intensity on the Eu concentration in Eu-doped GaN was studied. This luminescence is observed at 622nm and originates from the intra-4f transition of the Eu3+ ion. The intensity of the luminescence increased with increasing Eu concentration, up to about 2at.%, and then abruptly decreased. It was found that polycrystalline growth began to be induced at Eu concentrations of more than 2at.%. In addition, clear evidence for the formation of EuN compounds was obtained by x-ray diffraction and extended x-ray absorption fine structure analysis. The cause of the concentration quenching is likely to be related to the polycrystalline growth as well as EuN formation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
