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Abstract
The critical phenomena on cobalt monolayer films were studied by means of computersimulation. Proposed approach on the base of data of scanning tunneling microscopy gives possibilityestimate of critical concentration needed for concentration transition into ferromagnetic state. Assumptionabout presence of critical switching field allowed simulated hysteresis loops for given 1.5,2.0, 2.5 and 3.0 ML cobalt samples in frame of Ising model, which ones have qualitative agreementwith magnetometric data.
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