Abstract
The growth rate during solid-phase epitaxy of Te implanted (100) silicon has been measured at 520°C as a function of the Te concentration in the range of 4×1019–1021 atoms/cm3. With increasing concentration the velocity decreases from about 50 A/min to about 1 A/min and it equals the value corresponding to undoped amorphous Si at 7×1019 atoms/cm3. This result and previous date on B, P, As, O, and C implantation, imply that the growth rate reaches a maximum value in a broad range of concentration close to the solid solubility limit of the considered dopant.
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