Abstract
Radiation-induced changes in the optical properties of chalcogenide glasses in the Ge-As-S system are investigated as a function of the concentration. Theoretical calculations are performed with due regard for possible constraints on the range of variation in the number of homobonds and heterobonds upon their switching in the structural network of chalcogenide glasses. The experimental data are obtained upon irradiation of GexAs40−xS60 thin films with fast electrons (6 MeV). The possible mechanism of structural transformations responsible for the specific features in the concentration dependence of the change in the band gap of chalcogenide glasses is discussed.
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