Abstract
Combined radioluminescence, afterglow and thermoluminescence experiments on single-crystal samples of co-doped CsI:Tl,Sm suggest that deeper samarium electron traps scavenge electrons from shallower thallium traps and that electrons subsequently released by samarium recombine non-radiatively with holes trapped as VKA(Tl+) centers, thus providing a mechanism for suppression of trapped-charge accumulation in repetitive applications. In the present investigation, experiments performed on two single-crystal samples of CsI:Tl,Sm with nominal concentrations of 0.11% Tl+ and of 0.2% and 0.05% Sm2+, respectively, support the inference that electrons tunnel freely between samarium ions and are trapped preferentially near VKA(Tl+) centers where non-radiative recombination is the rate-limiting step.
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