Concentration and temperature dependence of the energy gap in some binary and alloy semiconductors

Abstract

Concentration dependence of the energy gap Eg(x) of In1−xGaxAs, InP1−xAsx, GaxAl1−xAs, GaPxAs1−x and AgGaxIn1−xSe2 alloy semiconductors, and temperature dependence of the energy gap Eg(T) of GaS, GaSe, GaTe, SnS and SnSe2 binary semiconductors have been studied. Both the concentration and temperature dependence of the energy gap Eg(x, T) of AlxGa1−xN ternary alloy, and concentrations dependence of the energy gap Eg(x, y) of In1−xGaxAs1−yPy quaternary alloy semiconductor have also been investigated. Simple relations have been proposed for the calculation of Eg(x), Eg(T), Eg(x, T) and Eg(x, y) for various binary and alloys semiconductors. The average percentage deviation of all proposed relations has been estimated and found to be better than the earlier correlations. The calculated values are compared with the available experimental values and the values reported by different workers. A fairly good agreement has been obtained between them.